Ultrafast Laser Internal Silicon Structuring (ULISiS)

Investigating internal ultrafast laser–silicon interaction to design innovative applications.

Illustration: M. Chambonneau, IAP-FSU

Ultrafast laser processing in the bulk of transparent materials (e.g., glasses, polymers) is a well-established technique with no equivalent for silicon. Any attempt to permanently modify silicon internally with infrared ultrashort laser pulses in a conventional manner is doomed to failure. These limitations originate from nonlinear propagation effects called “filamentation”. In the ULISiS subgroup, we perform fundamental investigations on the propagation of infrared ultrashort laser pulses inside silicon to identify the nonlinear phenomena that govern light–matter interaction. This fundamental comprehension allows us to develop strategies to bypass the intrinsic limitations in energy deposition inside silicon. In turn, these innovative strategies are employed for devising numerous applications including wafer dicing, through-silicon welding, 3D optical functionalization, and backside amorphization.

  1. Chambonneau, Maxime, Dr Postdoc, Research Group Leader Ultrafast Optics

    IAP, Room 202
    Albert-Einstein-Straße 15
    07745 Jena

    Portrait Maxime Chambonneau
    Image: private
  2. Blothe, Markus PhD Student Ultrafast Optics

    IAP, Room 202
    Albert-Einstein-Straße 15
    07745 Jena

    Portrait Markus Blothe
    Image: Heiko Homig
  3. Alasgarzade, Namig PhD Student Ultrafast Optics

    IAP, Room 202
    Albert-Einstein-Straße 15
    07745 Jena

    Portrait Namig Alasgarzade
    Image: Christoph Worsch (University of Jena)